We report our results on InGaNAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications at 1.3 /spl mu/m range. The epitaxial layers were grown on the n-GaAs substrate in a MOCVD system. The nitrogen composition of the InGaNAs/GaAs active region is 0 to 0.01. These InGaNAs VCSELs show continuous-wave (CW) lasing operation at room temperature.
Characteristics of InGaNAs vertical-cavity surface-emitting lasers
2003-01-01
62127 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Characteristics of InGaNAs vertical-cavity surface-emitting lasers
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