We report our results on InGaNAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications at 1.3 /spl mu/m range. The epitaxial layers were grown on the n-GaAs substrate in a MOCVD system. The nitrogen composition of the InGaNAs/GaAs active region is 0 to 0.01. These InGaNAs VCSELs show continuous-wave (CW) lasing operation at room temperature.


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    Titel :

    Characteristics of InGaNAs vertical-cavity surface-emitting lasers


    Beteiligte:
    Yang, H.-P.D. (Autor:in) / Chen-Ming Lu, (Autor:in) / Chun-Yuan Huang, (Autor:in) / Jing-May Wang, (Autor:in) / Chia-Pin Sung, (Autor:in) / Tsin-Dong Lee, (Autor:in) / Chi, J.Y. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    62127 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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