We will discuss fabrication and characteristics of III-nitride based multiquantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The device structure includes a 4 /spl mu/m GaN:Si lateral n-contact layer, 0.4 /spl mu/m AlGaN cladding layers, and a InGaN multiple quantum well active region surrounded by 0.1 /spl mu/m GaN:Si waveguide layers.


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    Title :

    Characterization of gain- and index-guided InGaN multiple quantum well laser diodes


    Contributors:
    Kneissl, M. (author) / Bour, D.P. (author) / Romano, L.T. (author) / Hofstetter, D. (author) / McCluskey, M.D. (author) / Donaldson, R. (author) / Dunnrowicz, C. (author) / Johnson, N.M. (author)


    Publication date :

    1998-01-01


    Size :

    126877 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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