We will discuss fabrication and characteristics of III-nitride based multiquantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The device structure includes a 4 /spl mu/m GaN:Si lateral n-contact layer, 0.4 /spl mu/m AlGaN cladding layers, and a InGaN multiple quantum well active region surrounded by 0.1 /spl mu/m GaN:Si waveguide layers.


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    Titel :

    Characterization of gain- and index-guided InGaN multiple quantum well laser diodes


    Beteiligte:
    Kneissl, M. (Autor:in) / Bour, D.P. (Autor:in) / Romano, L.T. (Autor:in) / Hofstetter, D. (Autor:in) / McCluskey, M.D. (Autor:in) / Donaldson, R. (Autor:in) / Dunnrowicz, C. (Autor:in) / Johnson, N.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    126877 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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