We will discuss fabrication and characteristics of III-nitride based multiquantum well (MQW) laser diodes grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The device structure includes a 4 /spl mu/m GaN:Si lateral n-contact layer, 0.4 /spl mu/m AlGaN cladding layers, and a InGaN multiple quantum well active region surrounded by 0.1 /spl mu/m GaN:Si waveguide layers.
Characterization of gain- and index-guided InGaN multiple quantum well laser diodes
01.01.1998
126877 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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