The carrier dynamics of an InGaN multiple-quantum-well (MQW) laser diode under the high current injection level is examined using time-resolved pump-probe measurements. Subpicosecond intersubband hole relaxation and hole heating processes are found to dominate carrier dynamics responses, different from GaAs and InP based laser diodes.


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    Titel :

    Femtosecond carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels


    Beteiligte:
    Kian-Giap Gan, (Autor:in) / Bowers, J.E. (Autor:in) / Chi-Kuang Sun, (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    121222 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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