ZnO epitaxial films are grown on sapphire (0001) substrates by metal organic chemical vapor deposition (MOCVD) at temperatures from 200 to 500 /spl deg/C. The half width (FWHM) of rocking curves from these films is greatly improved with increasing the growth temperature, T/sub g/, with a sudden decrease at about T/sub g/= 300 /spl deg/C. The in-plane orientation of ZnO unit cells changes with temperature: no-twist for T/sub g/ = 200 /spl deg/C and 30 /spl deg/twist for T/sub g/ /spl ges/300 /spl deg/C with respect to the unit cell of the substrate. The surface morphology is strongly dependent on growth temperature, with smooth surfaces at low T/sub g/. The emission spectra from the ZnO films are dominated by bound exciton transitions and better emission properties are obtained for Tg > 375 /spl deg/C. Acceptor-related emissions were observed from ZnO films grown at Tg < 300 /spl deg/C, indicating the importance of growth at low temperatures in future applications of ZnO-related oxides.


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    Title :

    Growth of ZnO epitaxial films by metal organic chemical vapor deposition at various temperatures


    Contributors:
    Zhang, B.P. (author) / Wakatsuki, K. (author) / Binh, N.T. (author) / Usami, N. (author) / Segawa, Y. (author)


    Publication date :

    2003-01-01


    Size :

    92765 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English