A room temperature CW operation of a GaInAs/GaInAsP/InP SCH quantum-wire laser with 5nm thick and 10-30nm wide vertically stacked triple-wire active region was achieved by using 2-step LP-OMVPE growth on p-type InP substrate, to increase the hole injection efficiency, and direct writing by an electron beam exposure followed by wet chemical etching.


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    Title :

    Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region


    Contributors:
    Miyake, Y. (author) / Hirayama, H. (author) / Tamura, S. (author) / Yoshida, J. (author) / Arai, S. (author) / Suematsu, Y. (author)


    Publication date :

    1992-01-01


    Size :

    171623 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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