A room temperature CW operation of a GaInAs/GaInAsP/InP SCH quantum-wire laser with 5nm thick and 10-30nm wide vertically stacked triple-wire active region was achieved by using 2-step LP-OMVPE growth on p-type InP substrate, to increase the hole injection efficiency, and direct writing by an electron beam exposure followed by wet chemical etching.


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    Titel :

    Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region


    Beteiligte:
    Miyake, Y. (Autor:in) / Hirayama, H. (Autor:in) / Tamura, S. (Autor:in) / Yoshida, J. (Autor:in) / Arai, S. (Autor:in) / Suematsu, Y. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    171623 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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