In summary, we report AlGaInP semiconductor laser diodes emitting output powers up to 39 mW CW at RT using an active region with a single quaternary compressively strained QW. Threshold currents as low as 55 mA have been obtained. The maximum operation temperature is greater than 40 C.<>


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    Title :

    Low threshold, high power 624 nm laser diodes


    Contributors:
    Geels, R.S. (author) / Welch, D.F. (author) / Bour, D.P. (author) / Treat, D.W. (author) / Bringans, R.D. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    157254 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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