In summary, we report AlGaInP semiconductor laser diodes emitting output powers up to 39 mW CW at RT using an active region with a single quaternary compressively strained QW. Threshold currents as low as 55 mA have been obtained. The maximum operation temperature is greater than 40 C.<>
Low threshold, high power 624 nm laser diodes
Proceedings of LEOS '93 ; 609-610
1993-01-01
157254 byte
Conference paper
Electronic Resource
English
Low Threshold, High Power 624 nm Laser Diodes
British Library Conference Proceedings | 1993
|IEEE | 2004
|British Library Conference Proceedings | 2004
|High Power InGaAlP Laser Diodes
IEEE | 1990
|High Power InGaAsP-based Laser Diodes
British Library Online Contents | 1995
|