In summary, we report AlGaInP semiconductor laser diodes emitting output powers up to 39 mW CW at RT using an active region with a single quaternary compressively strained QW. Threshold currents as low as 55 mA have been obtained. The maximum operation temperature is greater than 40 C.<>


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    Titel :

    Low threshold, high power 624 nm laser diodes


    Beteiligte:
    Geels, R.S. (Autor:in) / Welch, D.F. (Autor:in) / Bour, D.P. (Autor:in) / Treat, D.W. (Autor:in) / Bringans, R.D. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    157254 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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