In summary, we report AlGaInP semiconductor laser diodes emitting output powers up to 39 mW CW at RT using an active region with a single quaternary compressively strained QW. Threshold currents as low as 55 mA have been obtained. The maximum operation temperature is greater than 40 C.<>
Low threshold, high power 624 nm laser diodes
Proceedings of LEOS '93 ; 609-610
01.01.1993
157254 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Low Threshold, High Power 624 nm Laser Diodes
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