Mid-infrared diode lasers (/spl lambda/=1.7-5 /spl mu/m) fabricated from GaInAsSb/AlGaAsSb heterostructures grown on GaSb substrates have been under development at Lincoln Laboratory for the past five years. Performance breakthroughs have been achieved by employing strained multiple-quantum-well active regions, and cw output power as high as 1.3 W has been obtained at room temperature near 2 /spl mu/m. These lasers, either employed as direct sources or for pumping of solid state lasers, can be used for a variety of applications exploiting the characteristics of this spectral range, which is eyesafe and includes important atmospheric transmission bands and molecular absorption lines.<>


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Progress in mid-infrared diode lasers


    Contributors:
    Choi, H.K. (author) / Turner, G.W. (author) / Walpole, J.N. (author) / Eglash, S.J. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    152378 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Progress in Mid-Infrared Diode Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Infrared diode lasers

    Lo, Wayne | American Institute of Physics | 1981


    GalnAsSb Mid-infrared diode lasers

    Spears, D.L. | IEEE | 1994


    Vehicle emissions measurements with infrared diode lasers

    Hill, John C. | American Institute of Physics | 1981


    Near-infrared diode lasers monitor molecular species

    Cooper, D. E. / Martinelli, R. U. | British Library Online Contents | 1992