Mid-infrared diode lasers (/spl lambda/=1.7-5 /spl mu/m) fabricated from GaInAsSb/AlGaAsSb heterostructures grown on GaSb substrates have been under development at Lincoln Laboratory for the past five years. Performance breakthroughs have been achieved by employing strained multiple-quantum-well active regions, and cw output power as high as 1.3 W has been obtained at room temperature near 2 /spl mu/m. These lasers, either employed as direct sources or for pumping of solid state lasers, can be used for a variety of applications exploiting the characteristics of this spectral range, which is eyesafe and includes important atmospheric transmission bands and molecular absorption lines.<>


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    Titel :

    Progress in mid-infrared diode lasers


    Beteiligte:
    Choi, H.K. (Autor:in) / Turner, G.W. (Autor:in) / Walpole, J.N. (Autor:in) / Eglash, S.J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    152378 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    Cooper, D. E. / Martinelli, R. U. | British Library Online Contents | 1992