Mid-infrared diode lasers (/spl lambda/=1.7-5 /spl mu/m) fabricated from GaInAsSb/AlGaAsSb heterostructures grown on GaSb substrates have been under development at Lincoln Laboratory for the past five years. Performance breakthroughs have been achieved by employing strained multiple-quantum-well active regions, and cw output power as high as 1.3 W has been obtained at room temperature near 2 /spl mu/m. These lasers, either employed as direct sources or for pumping of solid state lasers, can be used for a variety of applications exploiting the characteristics of this spectral range, which is eyesafe and includes important atmospheric transmission bands and molecular absorption lines.<>
Progress in mid-infrared diode lasers
Proceedings of LEOS '93 ; 722-723
01.01.1993
152378 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Progress in Mid-Infrared Diode Lasers
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