Summary form only given. In this talk we describe recent results in achieving lasing wavelength control in selectively oxidized AlAs-GaAs DBR QW VCSEL arrays, as well as reduction in lasing threshold. To demonstrate the wavelength control, we used a scanning electron microscope of a 2x2 array in which the lateral sizes of the individual VCSELs are varied in 0.5 /spl mu/m steps from 3.0 /spl mu/m to 1.5 /spl mu/m. The lateral cavity dimensions are set by the sizes of GaAs mesas that serve as oxidation masks.


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    Title :

    Low threshold Al/sub x/O/sub y/-confined VCSELs and densely-packed arrays


    Contributors:
    Huffaker, D.L. (author) / Graham, L.A. (author) / Deng, H. (author) / Deppe, D.G. (author)


    Publication date :

    1996-01-01


    Size :

    147433 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low Threshold AlxOy-Confined VCSELs and Densely-Packed Arrays

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996




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