Summary form only given. In this talk we describe recent results in achieving lasing wavelength control in selectively oxidized AlAs-GaAs DBR QW VCSEL arrays, as well as reduction in lasing threshold. To demonstrate the wavelength control, we used a scanning electron microscope of a 2x2 array in which the lateral sizes of the individual VCSELs are varied in 0.5 /spl mu/m steps from 3.0 /spl mu/m to 1.5 /spl mu/m. The lateral cavity dimensions are set by the sizes of GaAs mesas that serve as oxidation masks.
Low threshold Al/sub x/O/sub y/-confined VCSELs and densely-packed arrays
1996-01-01
147433 byte
Conference paper
Electronic Resource
English
Low Threshold AlxOy-Confined VCSELs and Densely-Packed Arrays
British Library Conference Proceedings | 1996
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