Summary form only given. In this talk we describe recent results in achieving lasing wavelength control in selectively oxidized AlAs-GaAs DBR QW VCSEL arrays, as well as reduction in lasing threshold. To demonstrate the wavelength control, we used a scanning electron microscope of a 2x2 array in which the lateral sizes of the individual VCSELs are varied in 0.5 /spl mu/m steps from 3.0 /spl mu/m to 1.5 /spl mu/m. The lateral cavity dimensions are set by the sizes of GaAs mesas that serve as oxidation masks.


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    Titel :

    Low threshold Al/sub x/O/sub y/-confined VCSELs and densely-packed arrays


    Beteiligte:
    Huffaker, D.L. (Autor:in) / Graham, L.A. (Autor:in) / Deng, H. (Autor:in) / Deppe, D.G. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    147433 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Low Threshold AlxOy-Confined VCSELs and Densely-Packed Arrays

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996




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