Localization energies of localized states of InGaN/GaN quantum well structures were obtained by fitting the data of photoluminescence (PL) and amplified spontaneous emission. The two-component decay times in time-resolved PL show consistent results.
Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures
2001-01-01
143761 byte
Conference paper
Electronic Resource
English
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