Localization energies of localized states of InGaN/GaN quantum well structures were obtained by fitting the data of photoluminescence (PL) and amplified spontaneous emission. The two-component decay times in time-resolved PL show consistent results.


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    Title :

    Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures


    Contributors:
    Shih-Wei Feng, (author) / Yung-Chen Cheng, (author) / Yang, C.C. (author) / Chin-Yi Tsai, (author) / Yen-Sheng Lin, (author) / Chen Hsu, (author) / Kung-Jeng Ma, (author) / Jen-Inn Chyi, (author)


    Publication date :

    2001-01-01


    Size :

    143761 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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