Localization energies of localized states of InGaN/GaN quantum well structures were obtained by fitting the data of photoluminescence (PL) and amplified spontaneous emission. The two-component decay times in time-resolved PL show consistent results.
Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures
01.01.2001
143761 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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