Localization energies of localized states of InGaN/GaN quantum well structures were obtained by fitting the data of photoluminescence (PL) and amplified spontaneous emission. The two-component decay times in time-resolved PL show consistent results.


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    Titel :

    Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures


    Beteiligte:
    Shih-Wei Feng, (Autor:in) / Yung-Chen Cheng, (Autor:in) / Yang, C.C. (Autor:in) / Chin-Yi Tsai, (Autor:in) / Yen-Sheng Lin, (Autor:in) / Chen Hsu, (Autor:in) / Kung-Jeng Ma, (Autor:in) / Jen-Inn Chyi, (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    143761 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Two-Component Photoluminescence Decay and Carrier Localization in InGaN/GaN Multiple Quantum Well Structures

    Feng, S.-W. / Cheng, Y.-C. / Yang, C. C. et al. | British Library Conference Proceedings | 2001



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    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    Phonon-replica transitions in InGaN/GaN quantum well structures

    Feng, S. W. / Tsai, C. Y. / Cheng, Y. C. et al. | British Library Online Contents | 2002