Summary form only given. At present, the main focus of III-V nitride research is the optimization of current-injected laser diodes in order to achieve a low lasing threshold and extend the lifetime of working devices. Whereas a significant amount of work has been dedicated to such issues as the choice of substrate, facet formation, measurement of far-field emission patterns, as well as the study of temperature effects on lasing characteristics, the subject of optical confinement has not been adequately addressed. In this work we introduce a novel technique for investigation of optical confinement in GaN-based lasing structures, which utilizes both high spatial and spectral resolution of sample emission.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Novel technique for evaluation of optical confinement in semiconductor lasing structures through spatially and spectrally resolved emission spectra


    Contributors:
    Bidnyk, S. (author) / Schmidt, T.J. (author) / Little, B.D. (author) / Krasinski, J. (author) / Song, J.J. (author)


    Publication date :

    1999-01-01


    Size :

    172330 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Spatially and Spectrally Resolved Imaging of a Polycrystalline ZnO Dots Using Near Field Optical Technique

    Yatsui, T. / Shimizu, T. / Yamamoto, Y. et al. | British Library Conference Proceedings | 2001


    Spectrally-Resolved Dynamics of Two-State Lasing in Quantum-Dot Lasers

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005



    Spectrally-resolved dynamics of two-state lasing in quantum-dot lasers

    Mao, M.-H. / Su, L.-C. / Wang, K.-C. et al. | IEEE | 2005