Summary form only given. At present, the main focus of III-V nitride research is the optimization of current-injected laser diodes in order to achieve a low lasing threshold and extend the lifetime of working devices. Whereas a significant amount of work has been dedicated to such issues as the choice of substrate, facet formation, measurement of far-field emission patterns, as well as the study of temperature effects on lasing characteristics, the subject of optical confinement has not been adequately addressed. In this work we introduce a novel technique for investigation of optical confinement in GaN-based lasing structures, which utilizes both high spatial and spectral resolution of sample emission.
Novel technique for evaluation of optical confinement in semiconductor lasing structures through spatially and spectrally resolved emission spectra
1999-01-01
172330 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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