GaN-based light-emitting diodes (LEDs) grown on sapphire substrates are integrated with Si by fusion bonding technique. GaN-based LEDs coated with Sn/Au are joined to Si coated with Ti/Au at 300 °C in a flowing nitrogen ambient for 30 min. Sapphire substrates are separated from the samples by laser lift-off (LLO) forming GaN-based LEDs/Sn/Au/Ti/Au/Si structures. Microscopy image, observed from the transparent GaN films, shows the uniform bonding interfaces free of air bubbles. The turn-on voltage of vertical GaN-based LEDs on Si decreases from 3.2v to 3.0v.


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    Title :

    The study of Si/metal/GaN fusion bonding


    Contributors:
    Wang Ting, (author) / Xu Lixin, (author) / Cui zhanzhong, (author)


    Publication date :

    2008-12-01


    Size :

    494712 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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