In this work, an experiment was carried out by making use of the interleaved pulse measurement to investigate the afterpulsing effect of InGaAs/InP APD at different temperatures. The primary dark current and detrap time as functions of temperature were obtained by fitting the experimental data. This work clearly reveals the impact of afterpulsing effect on the dark count rate, and an optimum operation temperature for low dark count was observed for InGaAs/InP APD photon counters.


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    Title :

    Afterpulsing of single-photon avalanche photodetectors


    Contributors:
    Kang, Y. (author) / Bethune, D.S. (author) / Risk, W.P. (author) / Lo, Y.-H. (author)


    Publication date :

    2003-01-01


    Size :

    123773 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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