In this work, an experiment was carried out by making use of the interleaved pulse measurement to investigate the afterpulsing effect of InGaAs/InP APD at different temperatures. The primary dark current and detrap time as functions of temperature were obtained by fitting the experimental data. This work clearly reveals the impact of afterpulsing effect on the dark count rate, and an optimum operation temperature for low dark count was observed for InGaAs/InP APD photon counters.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Afterpulsing of single-photon avalanche photodetectors


    Beteiligte:
    Kang, Y. (Autor:in) / Bethune, D.S. (Autor:in) / Risk, W.P. (Autor:in) / Lo, Y.-H. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    123773 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Afterpulsing of Single-Photon Avalanche Photodetectors

    IEEE | British Library Conference Proceedings | 2003


    Non-Markovian Property of Afterpulsing Effect in Single-Photon Avalanche Detector

    Wang, F.-X. / Chen, W. / Li, Y.-P. et al. | British Library Online Contents | 2016




    A Simple and Robust Method for Estimating Afterpulsing in Single Photon Detectors

    Humer, Gerhard / Peev, Momtchil / Schaeff, Christoph et al. | British Library Online Contents | 2015