Reactive ion beam etch (RIBE) is one of the most important dry etching techniques for microfabrication of semiconductor devices such as microsized vertical-cavity surface-emitting lasers (VCSELs) which have a side-etched shape near the bottom of mesas We think the side-etch is caused due to the temperature rise by ion irradiation. In this paper, the measurement of surface temperature by using a radiation thermometer is carried out, in-situ during RIBE. We propose a multistep RIBE to improve etching profiles in order to alleviate the temperature rise. In this experiment, we used a high-vacuum RIBE system which has an electron cyclotron resonance-type ion source.
Suppression of side-etch and smoothing of micro-needle on etched surface by multistep RIBE
1995-01-01
212719 byte
Conference paper
Electronic Resource
English
Suppression of Side-Etch and Smoothing of Micro-Needle on Etched Surface by Multistep RIBE
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