Reactive ion beam etch (RIBE) is one of the most important dry etching techniques for microfabrication of semiconductor devices such as microsized vertical-cavity surface-emitting lasers (VCSELs) which have a side-etched shape near the bottom of mesas We think the side-etch is caused due to the temperature rise by ion irradiation. In this paper, the measurement of surface temperature by using a radiation thermometer is carried out, in-situ during RIBE. We propose a multistep RIBE to improve etching profiles in order to alleviate the temperature rise. In this experiment, we used a high-vacuum RIBE system which has an electron cyclotron resonance-type ion source.


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    Titel :

    Suppression of side-etch and smoothing of micro-needle on etched surface by multistep RIBE


    Beteiligte:
    Matsutani, A. (Autor:in) / Koyama, F. (Autor:in) / Iga, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    212719 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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