In summary, we have demonstrated high performance 850 nm GaAs DBR QW VCSELs on p-type substrates with low series resistance of 17 ohms for 22 /spl mu/m implant diameters. The current spreading can be reduced by optimizing the doping profile above the active region. Both n-side-up and p-side-up VCSELs show comparable speed response of 1.5 Gbps.
Low series resistance OMVPE grown 850 nm vertical-cavity surface-emitting lasers on p-type GaAs substrates
1996-01-01
120973 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1996
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