In summary, we have demonstrated high performance 850 nm GaAs DBR QW VCSELs on p-type substrates with low series resistance of 17 ohms for 22 /spl mu/m implant diameters. The current spreading can be reduced by optimizing the doping profile above the active region. Both n-side-up and p-side-up VCSELs show comparable speed response of 1.5 Gbps.


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    Title :

    Low series resistance OMVPE grown 850 nm vertical-cavity surface-emitting lasers on p-type GaAs substrates


    Contributors:
    Lei, C. (author) / Hodge, L.A. (author)


    Publication date :

    1996-01-01


    Size :

    120973 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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