In summary, we have demonstrated high performance 850 nm GaAs DBR QW VCSELs on p-type substrates with low series resistance of 17 ohms for 22 /spl mu/m implant diameters. The current spreading can be reduced by optimizing the doping profile above the active region. Both n-side-up and p-side-up VCSELs show comparable speed response of 1.5 Gbps.


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    Titel :

    Low series resistance OMVPE grown 850 nm vertical-cavity surface-emitting lasers on p-type GaAs substrates


    Beteiligte:
    Lei, C. (Autor:in) / Hodge, L.A. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    120973 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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