We present experimental characterization and numerical simulation of metal-semiconductor-metal type ultrafast photoswitches made from low temperature grown GaAs doped with beryllium (LT-GaAs:Be). Generation and detection of electrical pulses are performed using a femtosecond laser source and a photoconductive sampling set up that involves nonlinear effect in the structure. Following the expected picosecond electrical response a longer relaxation tail is clearly detected. Our model shows that this long term effect is due to a contribution of free holes, which lifetime can reach hundredth of picoseconds.


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    Title :

    Carriers dynamics measurements in ultrafast photoconductive switches for THz applications


    Contributors:
    Eusebe, H. (author) / Roux, J.-F. (author) / Garet, F. (author) / Coutaz, J.-L. (author) / Krotkus, A. (author) / Bertulis, K. (author)


    Publication date :

    2004-01-01


    Size :

    145893 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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