We present experimental characterization and numerical simulation of metal-semiconductor-metal type ultrafast photoswitches made from low temperature grown GaAs doped with beryllium (LT-GaAs:Be). Generation and detection of electrical pulses are performed using a femtosecond laser source and a photoconductive sampling set up that involves nonlinear effect in the structure. Following the expected picosecond electrical response a longer relaxation tail is clearly detected. Our model shows that this long term effect is due to a contribution of free holes, which lifetime can reach hundredth of picoseconds.
Carriers dynamics measurements in ultrafast photoconductive switches for THz applications
2004-01-01
145893 byte
Conference paper
Electronic Resource
English
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