We present experimental characterization and numerical simulation of metal-semiconductor-metal type ultrafast photoswitches made from low temperature grown GaAs doped with beryllium (LT-GaAs:Be). Generation and detection of electrical pulses are performed using a femtosecond laser source and a photoconductive sampling set up that involves nonlinear effect in the structure. Following the expected picosecond electrical response a longer relaxation tail is clearly detected. Our model shows that this long term effect is due to a contribution of free holes, which lifetime can reach hundredth of picoseconds.


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    Titel :

    Carriers dynamics measurements in ultrafast photoconductive switches for THz applications


    Beteiligte:
    Eusebe, H. (Autor:in) / Roux, J.-F. (Autor:in) / Garet, F. (Autor:in) / Coutaz, J.-L. (Autor:in) / Krotkus, A. (Autor:in) / Bertulis, K. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    145893 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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