Summary form only given. We have fabricated ultrafast photoconductive switches on a GaAs substrate using an atomic force microscope (AFM) based on anodic oxidation. We report the ultrafast photoconductive switches on a thin absorption layer of low-temperature-grown GaAs which is used to reduce the transit time of carriers.


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    Titel :

    Ultrafast photoconductive switches on a thin absorption layer fabricated by using an atomic force microscope


    Beteiligte:
    Itatani, T. (Autor:in) / Eikkawa, H. (Autor:in) / Tanuma, Y. (Autor:in) / Matsumoto, K. (Autor:in) / Sugaya, T. (Autor:in) / Nakagawa, T. (Autor:in) / Sugiyama, Y. (Autor:in) / Yonei, K. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    266691 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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    Itatani, T. / Nakagawa, T. / SPIE | British Library Conference Proceedings | 1998