We investigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.


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    Title :

    Noise characterization of Ge/Si photodetectors


    Contributors:
    Colace, L. (author) / Scacchi, A. (author) / Assanto, G. (author)


    Publication date :

    2011-09-01


    Size :

    610004 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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