We investigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.
Noise characterization of Ge/Si photodetectors
2011-09-01
610004 byte
Conference paper
Electronic Resource
English
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