We investigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.


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    Titel :

    Noise characterization of Ge/Si photodetectors


    Beteiligte:
    Colace, L. (Autor:in) / Scacchi, A. (Autor:in) / Assanto, G. (Autor:in)


    Erscheinungsdatum :

    01.09.2011


    Format / Umfang :

    610004 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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