Reverse-bias safe operating area (RBSOA) of high-power Darlington transistors is characterized using a 120 A/1000 V nondestructive reverse-bias second breakdown tester designed and fabricated at Virginia Polytechnic Institute and State University. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Nondestructive Characterization of RBSOA of High-Power Bipolar Transistors


    Contributors:

    Published in:

    Publication date :

    1986-03-01


    Size :

    3145986 byte




    Type of media :

    Article (Journal)


    Type of material :

    Electronic Resource


    Language :

    English



    Nondestructive characterization of RBSOA of high-power bipolar transistors

    Jovanovic, M. M. / Lee, F. C. / Chen, D. Y. | NTRS | 1986


    Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules

    Busatto, G. / Abbate, C. / Abbate, B. et al. | British Library Conference Proceedings | 2008




    ST Rad-Hard Power Bipolar Transistors Product Portofolio

    Camonita, G. / Pintacuda, F. / European Space Agency | British Library Conference Proceedings | 2011