Reverse-bias safe operating area (RBSOA) of high-power Darlington transistors is characterized using a 120 A/1000 V nondestructive reverse-bias second breakdown tester designed and fabricated at Virginia Polytechnic Institute and State University. Elaborate RBSOA characteristics are generated with different forward/reverse base drives and collector current levels. The effects of elevated case temperature and second-base drive on RBSOA of four-terminal Darlington devices are also discussed.


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    Titel :

    Nondestructive Characterization of RBSOA of High-Power Bipolar Transistors


    Beteiligte:
    Jovanovic, Milan M. (Autor:in) / Lee, Fred C. (Autor:in) / Chen, Dan Y. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.03.1986


    Format / Umfang :

    3145986 byte




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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