Complete activation of irradiative defects in multirecipe Si/sup +/-implanted PECVD grown 5000 nm-thick SiO/sub 2/ on Si via annealing at 1100 /spl deg/C in Ar ambient for 60 min has been observed with maximum visible photoluminescence at 442 nm.
Enhanced visible photoluminescence of multienergy silicon ion implanted SiO/sub 2/ films
2003-01-01
26820 byte
Conference paper
Electronic Resource
English
Enhanced visible photoluminescence of multi-energy silicon ion implanted SiO~2 films
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