Complete activation of irradiative defects in multirecipe Si/sup +/-implanted PECVD grown 5000 nm-thick SiO/sub 2/ on Si via annealing at 1100 /spl deg/C in Ar ambient for 60 min has been observed with maximum visible photoluminescence at 442 nm.


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    Title :

    Enhanced visible photoluminescence of multienergy silicon ion implanted SiO/sub 2/ films


    Contributors:


    Publication date :

    2003-01-01


    Size :

    26820 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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