Summary form only given. Establishment of the technology of heteroepitaxial growth of nitrides on highly-mismatched substrate, and the achievement of conductivity control of nitrides are leading to the accomplishment of high performance short wavelength light emitters.


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    Title :

    The state of the art of group III nitride based light emitters


    Contributors:
    Akasaki, I. (author) / Amano, H. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 331 vol.1


    Publication date :

    1994-01-01


    Size :

    21147 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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