Summary form only given. Establishment of the technology of heteroepitaxial growth of nitrides on highly-mismatched substrate, and the achievement of conductivity control of nitrides are leading to the accomplishment of high performance short wavelength light emitters.
The state of the art of group III nitride based light emitters
Proceedings of LEOS'94 ; 1 ; 331 vol.1
1994-01-01
21147 byte
Conference paper
Electronic Resource
English
The State of the Art of Group III Nitride Based Light Emitters
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