Summary form only given. Establishment of the technology of heteroepitaxial growth of nitrides on highly-mismatched substrate, and the achievement of conductivity control of nitrides are leading to the accomplishment of high performance short wavelength light emitters.
The state of the art of group III nitride based light emitters
Proceedings of LEOS'94 ; 1 ; 331 vol.1
01.01.1994
21147 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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