InGaAs-on-silicon photodetectors are very attractive in a variety of low noise and high-speed applications where the superior thermal and electrical properties of Si can be exploited to overcome the limitations of existing detectors. InGaAs-on-silicon p-i-n devices can potentially have a much higher dynamic range than InP-based devices. The low excess noise of InGaAs-on-silicon avalanche photodiodes (APD) has a direct impact on receiver sensitivity and the high gain-bandwidth product is of particular interest in high-speed (10 Gb/s and above) systems.


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    Title :

    Prospects for low noise and high speed InGaAs-on-silicon photodetectors


    Contributors:
    Pauchard, A. (author) / Bitter, M. (author) / Pan, Z. (author) / Kristjansson, S. (author) / Dimitrov, R. (author) / Hodge, L. (author) / Lo, Y.H. (author)


    Publication date :

    2003-01-01


    Size :

    86107 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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