InGaAs-on-silicon photodetectors are very attractive in a variety of low noise and high-speed applications where the superior thermal and electrical properties of Si can be exploited to overcome the limitations of existing detectors. InGaAs-on-silicon p-i-n devices can potentially have a much higher dynamic range than InP-based devices. The low excess noise of InGaAs-on-silicon avalanche photodiodes (APD) has a direct impact on receiver sensitivity and the high gain-bandwidth product is of particular interest in high-speed (10 Gb/s and above) systems.


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    Titel :

    Prospects for low noise and high speed InGaAs-on-silicon photodetectors


    Beteiligte:
    Pauchard, A. (Autor:in) / Bitter, M. (Autor:in) / Pan, Z. (Autor:in) / Kristjansson, S. (Autor:in) / Dimitrov, R. (Autor:in) / Hodge, L. (Autor:in) / Lo, Y.H. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    86107 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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