InGaAs-on-silicon photodetectors are very attractive in a variety of low noise and high-speed applications where the superior thermal and electrical properties of Si can be exploited to overcome the limitations of existing detectors. InGaAs-on-silicon p-i-n devices can potentially have a much higher dynamic range than InP-based devices. The low excess noise of InGaAs-on-silicon avalanche photodiodes (APD) has a direct impact on receiver sensitivity and the high gain-bandwidth product is of particular interest in high-speed (10 Gb/s and above) systems.
Prospects for low noise and high speed InGaAs-on-silicon photodetectors
01.01.2003
86107 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Prospects for Low Noise and High Speed InGaAs-on-Silicon Photodetectors
British Library Conference Proceedings | 2003
|British Library Online Contents | 1996
|Gbit/s integrated Si/InGaAs telecommunication photodetectors
British Library Conference Proceedings | 1998
|High-speed wafer-fused photodetectors
IEEE | 1997
|