We report development of array compatible individual high-performance quantum dot pixel structures that allow for spectral tuning by the application of an external bias. Custom-made post-processing algorithms have been used to further enhance and optimize their tuning and spectral-separation capability far beyond the device limit. The dots-in-a-well (DWELL) detector consists of 10 layers of InAs dots placed in a thin InGaAs well, which in turn is placed in a GaAs matrix. The DWELL structure provides good confinement for the carriers trapped in the quantum dots.
Bias-dependent tunable response of normal incidence long wave infrared quantum dot detectors
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 754-755 vol.2
2002-01-01
157469 byte
Conference paper
Electronic Resource
English
ThO2 Bias-Dependent Tunable Response of Normal Incidence Long Wave Infrared Quantum Dot Detectors
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