We report development of array compatible individual high-performance quantum dot pixel structures that allow for spectral tuning by the application of an external bias. Custom-made post-processing algorithms have been used to further enhance and optimize their tuning and spectral-separation capability far beyond the device limit. The dots-in-a-well (DWELL) detector consists of 10 layers of InAs dots placed in a thin InGaAs well, which in turn is placed in a GaAs matrix. The DWELL structure provides good confinement for the carriers trapped in the quantum dots.


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    Titel :

    Bias-dependent tunable response of normal incidence long wave infrared quantum dot detectors


    Beteiligte:
    Krishna, S. (Autor:in) / Rotella, P. (Autor:in) / Raghavan, S. (Autor:in) / Stintz, A. (Autor:in) / Hayat, M. (Autor:in) / Tyo, S.J. (Autor:in) / Kennerly, S.W. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    157469 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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