We report the characteristics of electrically injected visible vertical cavity surface emitting lasers (VCSELs) operating over a wide range of wavelengths, from 643 to 664 nm. The devices are grown on (311)A substrates, and consist of an 8-wave thick AlGaInP strained quantum well optical cavity active region surrounded by distributed Bragg reflectors (DBRs). Pulsed room temperature lasing is obtained, for the first time, at the n=l (664 nm) quantum well transition. Shorter wavelength operation has also been obtained, due to gain contributions from the n=2 state.<>


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    Title :

    Gain characteristics of red AlGaInP VCSELs


    Contributors:

    Published in:

    Publication date :

    1993-01-01


    Size :

    122969 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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