We report the characteristics of electrically injected visible vertical cavity surface emitting lasers (VCSELs) operating over a wide range of wavelengths, from 643 to 664 nm. The devices are grown on (311)A substrates, and consist of an 8-wave thick AlGaInP strained quantum well optical cavity active region surrounded by distributed Bragg reflectors (DBRs). Pulsed room temperature lasing is obtained, for the first time, at the n=l (664 nm) quantum well transition. Shorter wavelength operation has also been obtained, due to gain contributions from the n=2 state.<>
Gain characteristics of red AlGaInP VCSELs
Proceedings of LEOS '93 ; 611-612
1993-01-01
122969 byte
Conference paper
Electronic Resource
English
Gain Characteristics of Red AlGaInP VCSELs
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