We report the characteristics of electrically injected visible vertical cavity surface emitting lasers (VCSELs) operating over a wide range of wavelengths, from 643 to 664 nm. The devices are grown on (311)A substrates, and consist of an 8-wave thick AlGaInP strained quantum well optical cavity active region surrounded by distributed Bragg reflectors (DBRs). Pulsed room temperature lasing is obtained, for the first time, at the n=l (664 nm) quantum well transition. Shorter wavelength operation has also been obtained, due to gain contributions from the n=2 state.<>


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    Titel :

    Gain characteristics of red AlGaInP VCSELs


    Beteiligte:
    Lott, J.A. (Autor:in) / Schneider, R.P. (Autor:in) / Zolper, J.C. (Autor:in) / Choquette, K.D. (Autor:in) / Malloy, K.J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    122969 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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