We report on optically-pumped mid-infrared (3.4 - 4.5 /spl mu/m) lasers based on InAs/InGaSb/InAs type-II quantum wells that are periodically inserted into the InGaAsSb waveguide designed to absorb the 1.85 /spl mu/m pump radiation. The integrated absorber layers allow the decoupling of pump absorption from the type-II quantum wells, and efficiently supply carries into these wells by ambipolar diffusion. These type-II integrated absorber lasers exhibit high quantum efficiency and high characteristic temperature associated with lasing threshold.


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    Title :

    Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers


    Contributors:
    Kaspi, R. (author) / Ongstad, A. (author) / Moeller, C. (author) / Dente, G. (author) / Tilton, M.L. (author) / Chavez, J. (author) / Gianardi, D. (author)


    Publication date :

    2001-01-01


    Size :

    131296 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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