We report on optically-pumped mid-infrared (3.4 - 4.5 /spl mu/m) lasers based on InAs/InGaSb/InAs type-II quantum wells that are periodically inserted into the InGaAsSb waveguide designed to absorb the 1.85 /spl mu/m pump radiation. The integrated absorber layers allow the decoupling of pump absorption from the type-II quantum wells, and efficiently supply carries into these wells by ambipolar diffusion. These type-II integrated absorber lasers exhibit high quantum efficiency and high characteristic temperature associated with lasing threshold.


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    Titel :

    Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers


    Beteiligte:
    Kaspi, R. (Autor:in) / Ongstad, A. (Autor:in) / Moeller, C. (Autor:in) / Dente, G. (Autor:in) / Tilton, M.L. (Autor:in) / Chavez, J. (Autor:in) / Gianardi, D. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    131296 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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