A wave-guide gallium-doped germanium (Ge:Ga) extrinsic photoconductor coupled to a silicon solid-immersion lens was developed. A linear-array configuration was automatically achieved via the fabrication process. The typical distance between the electrodes was designed to be 0.050 mm (/spl sim/2 wavelength/refractive index), which is about one-tenth of that in conventional Ge:Ga photoconductors. The short distance between the electrodes resulted in high responsivity and low noise characteristics.
A novel wave-guide Ge:Ga photoconductor
2004-01-01
169459 byte
Conference paper
Electronic Resource
English
Convections and crystal growth of Ge:Ga
British Library Online Contents | 1994
|Performances Of Arrays Of Ge:Ga Far-Infrared Detectors
NTRS | 1992
|Untersuchungen zum Bridgman-Verfahren am System Ge:Ga
TIBKAT | 1991
|Response of stressed Ge:Ga at millimeter wavelengths
IEEE | 1989
|