A wave-guide gallium-doped germanium (Ge:Ga) extrinsic photoconductor coupled to a silicon solid-immersion lens was developed. A linear-array configuration was automatically achieved via the fabrication process. The typical distance between the electrodes was designed to be 0.050 mm (/spl sim/2 wavelength/refractive index), which is about one-tenth of that in conventional Ge:Ga photoconductors. The short distance between the electrodes resulted in high responsivity and low noise characteristics.


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    Title :

    A novel wave-guide Ge:Ga photoconductor


    Contributors:
    Hosako, I. (author) / Hiromoto, N. (author)


    Publication date :

    2004-01-01


    Size :

    169459 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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