We have demonstrated lasing in two polarizations in a InP-InGaAsP strained quantum well laser at 1.55 /spl mu/m and have been able to switch the lasing polarization with change in temperature. The analysis of the lasing behavior of this device aids in the design of polarization insensitive amplifiers and dual polarization-lasers as well as offers insight into the process of carrier capture and leakage in quantum wells.


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    Title :

    1.55 /spl mu/m dual polarization lasers containing tensile and compressive strained quantum wells


    Contributors:
    Mathur, A. (author) / Dapkus, P.D. (author)

    Published in:

    Proceedings of LEOS'94 ; 2 ; 383-384 vol.2


    Publication date :

    1994-01-01


    Size :

    149943 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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