We propose a novel technique to realize quasi-phase-matched structures using compound semiconductors based on sublattice-reversal epitaxy, in which the sublattices of the zinc-blende structure are interchanged in the process of epitaxy. Sublattice-reversal epitaxy has been demonstrated in GaAs-Si-GaAs [100], GaP-Si-GaP [100], GaAs-Ge-GaAs [100] and GaAs-Ge-GaAs [111] systems.


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    Title :

    Quasi-phase-matched devices using sublattice-reversed semiconductor heterostructures


    Contributors:
    Ito, R. (author) / Koh, S. (author) / Kondox, T. (author)


    Publication date :

    1999-01-01


    Size :

    167110 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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