We propose a novel technique to realize quasi-phase-matched structures using compound semiconductors based on sublattice-reversal epitaxy, in which the sublattices of the zinc-blende structure are interchanged in the process of epitaxy. Sublattice-reversal epitaxy has been demonstrated in GaAs-Si-GaAs [100], GaP-Si-GaP [100], GaAs-Ge-GaAs [100] and GaAs-Ge-GaAs [111] systems.


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    Titel :

    Quasi-phase-matched devices using sublattice-reversed semiconductor heterostructures


    Beteiligte:
    Ito, R. (Autor:in) / Koh, S. (Autor:in) / Kondox, T. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    167110 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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