We propose a novel technique to realize quasi-phase-matched structures using compound semiconductors based on sublattice-reversal epitaxy, in which the sublattices of the zinc-blende structure are interchanged in the process of epitaxy. Sublattice-reversal epitaxy has been demonstrated in GaAs-Si-GaAs [100], GaP-Si-GaP [100], GaAs-Ge-GaAs [100] and GaAs-Ge-GaAs [111] systems.
Quasi-phase-matched devices using sublattice-reversed semiconductor heterostructures
01.01.1999
167110 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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