We demonstrate a GaAs based OPO. The singly resonant, pulsed OPO utilized an all-epitaxially-grown orientation-patterned GaAs (OP-GaAs) crystal. By tuning either near-IR pump wavelength or OP-GaAs temperature, we achieved broad tunability between 2 and 10 microns.
Optical parametric oscillation in quasi-phase-matched GaAs
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 3 pp. vol.1
01.01.2004
232903 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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