Growth on patterned substrates has become an important technique for optoelectronic device applications. The patterned substrates have a masked pattern with SiO/sub 2//Si/sub 3/N/sub 4/ as the masking material, or an etched pattern without a mask, or a combination of these two techniques. Surface migration of molecules adsorbed on different crystal facets observed in CBE leads to variation in grown thickness between different facets and also compositional non-uniformities due to differences in migration lengths of various species. This technique provides a very convenient tool for obtaining multi-wavelength laser arrays for wavelength division multiplexing (WDM) applications, monolithic laser-modulator structures, in one epitaxial growth step.<>
Multi-wavelength laser array by chemical beam epitaxy on patterned InP substrates
Proceedings of LEOS '93 ; 439-440
1993-01-01
182154 byte
Conference paper
Electronic Resource
English
Multi-Wavelength Laser Array by Chemical Beam Epitaxy on Patterned InP Substrates
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