Growth on patterned substrates has become an important technique for optoelectronic device applications. The patterned substrates have a masked pattern with SiO/sub 2//Si/sub 3/N/sub 4/ as the masking material, or an etched pattern without a mask, or a combination of these two techniques. Surface migration of molecules adsorbed on different crystal facets observed in CBE leads to variation in grown thickness between different facets and also compositional non-uniformities due to differences in migration lengths of various species. This technique provides a very convenient tool for obtaining multi-wavelength laser arrays for wavelength division multiplexing (WDM) applications, monolithic laser-modulator structures, in one epitaxial growth step.<>


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    Titel :

    Multi-wavelength laser array by chemical beam epitaxy on patterned InP substrates


    Beteiligte:
    Kapre, R.M. (Autor:in) / Tsang, W.T. (Autor:in) / Chen, Y.K. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    182154 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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