We present 1.5 /spl mu/m CW GaInNAsSb/GaAs lasers with typical room temperature threshold densities below 600 A/cm/sup 2/, external efficiencies above 50% and output powers of 200 mW. Z-parameter measurements show these improvements are primarily due to reduced monomolecular recombination.
Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 /spl mu/m
2004-01-01
151308 byte
Conference paper
Electronic Resource
English
Reduced Monomolecular Recombination in GaInNAsSb/GaAs Lasers at 1.5mum
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