We present 1.5 /spl mu/m CW GaInNAsSb/GaAs lasers with typical room temperature threshold densities below 600 A/cm/sup 2/, external efficiencies above 50% and output powers of 200 mW. Z-parameter measurements show these improvements are primarily due to reduced monomolecular recombination.


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    Title :

    Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 /spl mu/m


    Contributors:
    Goddard, L.L. (author) / Bank, S.S. (author) / Wistey, M.A. (author) / Yuen, H.B. (author) / Bae, H.P. (author) / Harris, J.S. (author)


    Publication date :

    2004-01-01


    Size :

    151308 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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